F9530N Datasheet, IRF9530N, International Rectifier

Download (Size : 126.95KB)

F9530N Features and benefits

est Circuit D.U.T* + + Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Transformer -
* + .

F9530N Application

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

F9530N Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .

Image gallery